Substrate processing apparatus and substrate processing method

ABSTRACT

In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.

RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 13/853,016, filed on Mar. 28, 2013, which in turn claims thebenefit to Japanese Patent Application No. 2012-073601, filed on Mar.28, 2012, the disclosures of which applications are incorporated byreference herein.

TECHNICAL FIELD

The present invention relates to a substrate processing apparatus forand a substrate processing method of processing substrates.

BACKGROUND ART

In a process of manufacturing a semiconductor substrate (hereinafter,referred to simply as a “substrate”), conventionally, variousprocessings are performed on a substrate by using a substrate processingapparatus. By supplying a processing liquid onto a substrate having asurface on which a resist pattern is formed, for example, a processingsuch as etching or the like is performed on the surface of thesubstrate. Further, after the etching is finished, a process of removingthe resist from the substrate and a process of cleaning the substrateare also performed.

Japanese Patent Application Laid-Open No. 2008-85150 (Document 1)relates to a method of cleaning a substrate on which a fine pattern isformed. In a cleaning device shown in Document 1, the inside of a sealedcover in which a substrate is placed is vacuumed to degas the substrate,and the wettability of a surface of the substrate can be therebyimproved. Subsequently, a processing liquid is supplied into the sealedcover and the whole of the substrate is immersed in the processingliquid. Then, after bringing the inside of the sealed cover back tonormal pressure and removing the sealed cover, rotation of the substrateis started and a cleaning process and the like are performed while theprocessing liquid is supplied onto the substrate. In the cleaningdevice, by improving the wettability of the surface of the substrate, acleaning solution can be brought into good contact with a recessedportion of the fine pattern. Further, in the cleaning device, byincreasing pressure in a state where the substrate is immersed in thecleaning solution, the cleaning solution can be infiltrated into therecessed portion of the fine pattern.

Japanese Patent Application Laid-Open No. 2005-191251 (Document 2)discloses an apparatus in which by supplying vapor or the like to awafer placed in a pressurized chamber in a pressurized atmosphere,moisture is infiltrated into an unnecessary substance on an uppersurface of a wafer, and then the unnecessary substance on the uppersurface is removed by supplying hot water or the like under normalpressure or in a reduced pressure atmosphere. Further, in asemiconductor wafer developing device disclosed in Japanese PatentApplication Laid-Open No. 6-283413 (Document 3), after bringing aprocessing chamber in which a semiconductor wafer is contained into areduced pressure atmosphere, by opening a developer supply valve, theprocessing chamber is filled with the developer. Then, the semiconductorwafer is immersed in the developer and the semiconductor wafer isthereby developed.

In a film formation device disclosed in Patent Publication No. 3099053(Document 4), a process gas supply part is provided above a wafer in achamber and an infrared lamp is provided below the wafer. Then, afterbringing the inside of the chamber into a vacuum atmosphere, bysupplying a process gas while heating the wafer, a thin film is formedon a surface of the wafer. Further, in an apparatus disclosed inJapanese Patent Application Laid-Open No. 9-246156 (Document 5), afterrinsing a developer or the like on a wafer by using a rinse liquid, thewafer is dried while being rotated at high speed in a reduced pressureatmosphere.

On the other hand, a semiconductor manufacturing apparatus disclosed inJapanese Patent Application Laid-Open No. 3-22428 (Document 6)uniformizes the amount of processing liquid to be dropped between acenter portion of a substrate and a peripheral portion thereof bylinearly moving a processing liquid discharge nozzle for dropping aprocessing liquid toward the substrate in a radial direction above thesubstrate being rotated.

In the case where a processing liquid is supplied onto a substrate and apredetermined processing is thereby performed on a main surface of thesubstrate, in order to shorten the time required for the processing anduniformize the quality of the processing entirely on the main surface ofthe substrate, it is preferable that the time from when the supply ofthe processing liquid is started until the main surface is coated withthe processing liquid should be as short as possible.

SUMMARY OF INVENTION

The present invention is intended for a substrate processing apparatusfor processing a substrate, and it is an object of the present inventionto perform coating of a main surface of a substrate with a processingliquid in a short time.

The substrate processing apparatus according to the present inventionincludes a substrate holding part for holding a substrate with a mainsurface thereof directed upward, a processing liquid supply part forsupplying a processing liquid onto a center portion of the main surfaceof the substrate, a substrate rotating mechanism for rotating thesubstrate together with the substrate holding part, a chamber forcontaining the substrate holding part in an internal space thereof, apressure changing part for changing pressure in the internal space ofthe chamber, and a control part for controlling the processing liquidsupply part, the substrate rotating mechanism, and the pressure changingpart to bring the internal space of the chamber into a reduced pressureatmosphere and supply the processing liquid onto the main surface of thesubstrate while rotating the substrate in the reduced pressureatmosphere, to thereby coat the main surface of the substrate with theprocessing liquid. By the substrate processing apparatus of the presentinvention, it is possible to perform coating of the main surface of thesubstrate with the processing liquid in a short time.

In a preferred embodiment of the present invention, a pattern is formedon the main surface of the substrate, and the control part controls theprocessing liquid supply part, the substrate rotating mechanism, and thepressure changing part, after the main surface of the substrate iscoated with the processing liquid, to increase pressure in the internalspace of the chamber and continuously supply the processing liquid ontothe main surface of the substrate while rotating the substrate, tothereby perform a predetermined processing.

Preferably, the predetermined processing is performed in a pressurizedatmosphere.

Further, the number of revolutions of the substrate in performing thepredetermined processing on the substrate is smaller than that of thesubstrate in coating the main surface of the substrate with theprocessing liquid.

In another preferred embodiment of the present invention, the substrateprocessing apparatus further includes a processing liquid discharge partfor sucking the processing liquid overflown from the main surface of thesubstrate near an edge of the substrate to discharge the processingliquid to the outside of the chamber.

In still another preferred embodiment of the present invention, thesupply of the processing liquid from the processing liquid supply partin the reduced pressure atmosphere of the internal space of the chamberis performed by a pressure difference between the internal space and theoutside of the chamber.

In yet another preferred embodiment of the present invention, thesubstrate processing apparatus further includes another processingliquid supply part for supplying another processing liquid onto thecenter portion of the main surface of the substrate, and in thesubstrate processing apparatus of the present invention, the controlpart controls the processing liquid supply part, the other processingliquid supply part, the substrate rotating mechanism, and the pressurechanging part to stop the supply of the processing liquid and bring theinternal space of the chamber into the reduced pressure atmosphere, andthen supply the other processing liquid onto the main surface of thesubstrate coated with the processing liquid to replace the processingliquid with the other processing liquid while rotating the substrate, tothereby coat the main surface of the substrate with the other processingliquid.

Preferably, a pattern is formed on the main surface of the substrate,and the control part controls the other processing liquid supply part,the substrate rotating mechanism, and the pressure changing part, afterthe main surface of the substrate is coated with the other processingliquid, to increase pressure in the internal space of the chamber andcontinuously supply the other processing liquid onto the main surface ofthe substrate while rotating the substrate, to thereby perform anotherprocessing.

More preferably, the other processing is performed in a pressurizedatmosphere.

In a further preferred embodiment of the present invention, thesubstrate processing apparatus further includes a heating part forheating the substrate, and in the substrate processing apparatus of thepresent invention, the control part controls the pressure changing partand the heating part to bring the internal space of the chamber into thereduced pressure atmosphere and heat the substrate in the reducedpressure atmosphere.

Preferably, the heating part emits light toward the substrate, tothereby heat the substrate.

In a still further preferred embodiment of the present invention, thecontrol part controls the pressure changing part and the substraterotating mechanism to bring the internal space of the chamber into thereduced pressure atmosphere and rotate the substrate in the reducedpressure atmosphere, to thereby dry the substrate.

In a yet further preferred embodiment of the present invention, theprocessing liquid is an etching solution.

The present invention is also intended for a substrate processing methodof processing a substrate.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view showing a configuration of a substrate processingapparatus in accordance with a first preferred embodiment of the presentinvention;

FIG. 2 is a flowchart showing an operation flow of substrate processing;

FIG. 3 is a timing chart of the substrate processing;

FIG. 4 is a view showing a configuration of a substrate processingapparatus in accordance with a second preferred embodiment of thepresent invention;

FIG. 5 is a flowchart showing an operation flow of substrate processing;and

FIG. 6 is a timing chart of the substrate processing.

DESCRIPTION OF EMBODIMENTS

FIG. 1 is a view showing a configuration of a substrate processingapparatus 1 in accordance with the first preferred embodiment of thepresent invention. The substrate processing apparatus 1 is asingle-substrate processing apparatus for supplying a processing liquidto a semiconductor substrate 9 (hereinafter, referred to simply as a“substrate 9”) having a substantially disk-like shape to processsubstrates one by one.

The substrate processing apparatus 1 includes a substrate holding part2, a first processing liquid supply part 3, a second processing liquidsupply part 4, a substrate rotating mechanism 5, a gas supply part 61, asuction part 62, a chamber 7, a heating part 8, and a control part 11.FIG. 1 is a cross section showing the substrate holding part 2, thesubstrate rotating mechanism 5, and the chamber 7.

The chamber 7 has a substantially disk-like chamber bottom 71, asubstantially cylindrical chamber sidewall 72 fixed to a periphery ofthe chamber bottom 71, a substantially disk-like chamber cover 73closing an upper opening of the chamber sidewall 72. The chamber cover73 is vertically movable, and the substrate 9 is loaded/unloadedinto/from the chamber 7 with the chamber cover 73 moved upward, beingaway from the chamber sidewall 72. When the chamber cover 73 is pressedonto an upper portion of the chamber sidewall 72, an internal space 70of the chamber 7, which is a sealed space, is formed. The chamber bottom71 and the chamber cover 73 are translucent members formed of quartz orthe like.

An upper pipe 75 is provided at a center portion of the chamber cover 73and an upper pipe 78 having an annular cross section is provided aroundthe upper pipe 75. The first processing liquid supply part 3 and thesecond processing liquid supply part 4 are connected to the upper pipe75 through an upper changeover valve 751, and the gas supply part 61 isconnected to the upper pipe 78. A lower center pipe 76 is provided at acenter portion of the chamber bottom 71. The first processing liquidsupply part 3 and the second processing liquid supply part 4 areconnected to the lower center pipe 76 through a lower changeover valve761. A plurality of lower peripheral pipes 77 are provided in aperipheral portion of the chamber bottom 71 at regular pitches in acircumferential direction. The suction part 62 is connected to theplurality of lower peripheral pipes 77 through a valve 621.

The substrate rotating mechanism 5 is a so-called hollow motor andincludes a stator 51 disposed inside the chamber sidewall 72 in thecircumferential direction and a substantially annular rotor 52 disposedinside the stator 51 in the internal space 70 of the chamber 7. Therotor 52 is supported by a magnetic force exerted between the rotor 52and the stator 51 without coming into contact with the stator 51 or thechamber sidewall 72 and rotated about a vertical central axis.

The substrate holding part 2 is a substantially annular disk-like memberfixed to an inner peripheral surface of the rotor 52 of the substraterotating mechanism 5 and contained in the internal space 70 of thechamber 7 together with the rotor 52. The substrate 9 is placed on thesubstrate holding part 2 with a main surface 91 (hereinafter, referredto as an “upper surface 91”) thereof on which a fine pattern is formeddirected upward, to be thereby held by the substrate holding part 2. Inother words, the substrate holding part 2 comes into contact with alower surface 92 of the substrate 9, to thereby hold the substrate 9.The substrate holding part 2 may be formed of, for example, a pluralityof convex portions protruding from the inner peripheral surface of therotor 52 inward in the radial direction. In the substrate processingapparatus 1, the control part 11 controls the substrate rotatingmechanism 5 to rotate the substrate 9 together with the substrateholding part 2 and the rotor 52 in a horizontal position about thecentral axis passing through the center of the substrate 9 and beingperpendicular to the upper surface 91 of the substrate 9.

The first processing liquid supply part 3 includes a first processingliquid pipe 31 for connecting a first pooling part 30 for pooling afirst processing liquid therein and the upper pipe 75 and a pump 32provided on the first processing liquid pipe 31. The second processingliquid supply part 4 (i.e. another processing liquid supply part)includes a second processing liquid pipe 41 for connecting a secondpooling part 40 for pooling a second processing liquid (i.e. anotherprocessing liquid) therein and the upper pipe 75 and a pump 42 providedon the second processing liquid pipe 41. The gas supply part 61 includesa gas pipe 611 for connecting a gas source 610 and the upper pipe 78,and a pump 612 and a valve 613 which are provided on the gas pipe 611.The upper pipe 75, the lower center pipe 76, the upper changeover valve751, and the lower changeover valve 761 which are described above areshared by the first processing liquid supply part 3 and the secondprocessing liquid supply part 4.

In the substrate processing apparatus 1, the control part 11 controlsthe pump 32 of the first processing liquid supply part 3, the upperchangeover valve 751, and the lower changeover valve 761 to supply thefirst processing liquid onto a center portion of the upper surface 91 ofthe substrate 9 from the upper pipe 75 and supply the first processingliquid onto a center portion of the lower surface 92 of the substrate 9from the lower center pipe 76. Further, the control part 11 controls thepump 42 of the second processing liquid supply part 4, the upperchangeover valve 751, and the lower changeover valve 761 to supply thesecond processing liquid onto the center portion of the upper surface 91of the substrate 9 from the upper pipe 75 and supply the secondprocessing liquid onto the center portion of the lower surface 92 of thesubstrate 9 from the lower center pipe 76. In this preferred embodiment,the first processing liquid is an etching solution such as hydrofluoricacid, a tetramethylammonium hydroxide solution, or the like, and thesecond processing liquid is deionized water (DIW).

In the substrate processing apparatus 1, the control part 11 controlsthe pump 612 and the valve 613 of the gas supply part 61 to supply gasinto the internal space 70 of the chamber 7 from the upper pipe 78. Inthis preferred embodiment, nitrogen gas (N₂) is supplied into thechamber 7 by the gas supply part 61.

The suction part 62 performs suction near an edge of the substrate 9through the plurality of lower peripheral pipes 77. This suction causesthe gas in the internal space 70 of the chamber 7 to be discharged tothe outside of the chamber 7. In the substrate processing apparatus 1,the control part 11 controls the gas supply part 61 and the suction part62 to change the pressure in the internal space 70 of the chamber 7.Specifically, by supplying gas into the chamber 7 from the gas supplypart 61 with the valve 621 between the suction part 62 and the lowerperipheral pipe 77 closed, the pressure in the internal space 70 of thechamber 7 increases to be higher than the normal pressure, (atmosphericpressure) and the internal space 70 is brought into a pressurizedatmosphere. Further, by discharging the gas from the chamber 7 by thesuction part 62 with the valve 613 of the gas supply part 61 closed, thepressure in the internal space 70 decreases to be lower than the normalpressure, and the internal space 70 is brought into a reduced pressureatmosphere. Thus, the gas supply part 61 and the suction part 62 serveas a pressure changing part for changing the pressure in the internalspace 70 of the chamber 7.

The suction part 62 performs suction near the edge of the substrate 9through the plurality of lower peripheral pipes 77, to thereby dischargethe processing liquids supplied into the chamber 7 by the firstprocessing liquid supply part 3 and the second processing liquid supplypart 4. Thus, the suction part 62 also serves as a processing liquiddischarge part.

The heating part 8 includes lamps 81 provided in an upper portion and alower portion of the chamber 7. The lamp 81 emits light toward thesubstrate 9 through the chamber cover 73 and the chamber bottom 71, tothereby heat the substrate 9.

FIG. 2 is a flowchart showing an operation flow of processing thesubstrate 9 in the substrate processing apparatus 1. FIG. 3 is a timingchart of processing the substrate 9. In FIG. 3, a line 101 representsthe pressure in the chamber 7, a line 102 represents the amount of firstprocessing liquid supplied from the first processing liquid supply part3, a line 103 represents the amount of second processing liquid suppliedfrom the second processing liquid supply part 4, and a line 104represents ON/OFF of the lamp 81 of the heating part 8.

In the substrate processing apparatus 1, first, the substrate 9 isloaded into the chamber 7 and held by the substrate holding part 2, andthe chamber cover 73 closes the upper opening of the chamber sidewall72, to thereby hermetically seal the chamber 7. After the chamber 7 ishermetically sealed, the control part 11 controls the substrate rotatingmechanism 5 to start rotation of the substrate 9 (Step S11).

Subsequently, the control part 11 controls the heating part 8 and thesuction part 62 to light the lamp 81 and discharge the gas from thechamber 7. Then, with the internal space 70 of the chamber 7 broughtinto the reduced pressure atmosphere, the heating part 8 heats thesubstrate 9 for a predetermined time period (Step S12). The pressure inthe internal space 70 of the chamber 7 which is in the reduced pressureatmosphere should be preferably set lower than the normal pressure, andnot lower than about 15 kPa.

Next, the control part 11 controls the first processing liquid supplypart 3 to continuously supply the first processing liquid from the upperpipe 75 onto the upper surface 91 of the substrate 9 being rotated inthe chamber 7 in the reduced pressure atmosphere. The first processingliquid supplied onto the center portion of the upper surface 91 of thesubstrate 9 is spread toward the peripheral portion by the rotation ofthe substrate 9, and the entire upper surface 91 is thereby coated withthe first processing liquid (Step S13). The first processing liquidoverflown from the upper surface 91 of the substrate 9 is sucked by thesuction part 62 which is controlled by the control part 11, to bethereby discharged to the outside of the chamber 7. Further, the firstprocessing liquid is also supplied from the lower center pipe 76 ontothe center portion of the lower surface 92 of the substrate 9 and spreadtoward the peripheral portion by the rotation of the substrate 9.

After the upper surface 91 of the substrate 9 is coated with the firstprocessing liquid, the control part 11 controls the gas supply part 61to increase the pressure in the internal space 70 of the chamber 7 to apredetermined pressure higher than the normal pressure, (preferablyhigher than the normal pressure, and not higher than a pressure higherthan the normal pressure by about 0.1 MPa). Further, the control part 11controls the first processing liquid supply part 3 and the substraterotating mechanism 5 to reduce the amount of first processing liquid(hereinafter, referred to as “flow rate”) supplied from the firstprocessing liquid supply part 3 per unit time and reduce the number ofrevolution (i.e. decrease the rotating speed) of the substrate 9. Asindicated by the two-dot chain line in FIG. 3, while the pressure in theinternal space 70 increases, the supply of the first processing liquidmay be stopped. When the internal space 70 of the chamber 7 is broughtinto a predetermined pressurized atmosphere, the first processing liquidwhich is an etching solution is continuously supplied at a flow ratelower than that in Step S13 onto the upper surface 91 of the substrate 9being rotated at a number of revolution less than that in Step S13 (i.e.at a rotating speed lower than that in Step S13) and an etching processis thereby performed for a predetermined time period (Step S14).

Subsequently, the control part 11 controls the suction part 62 to reducethe pressure in the internal space 70 of the chamber 7 to apredetermined pressure lower than the normal pressure (preferably lowerthan the normal pressure, and not lower than about 15 kPa). Then, thesupply of the first processing liquid from the first processing liquidsupply part 3 is stopped, and the lamp 81 is extinguished and theheating part 8 stops heating the substrate 9.

Next, the control part 11 controls the second processing liquid supplypart 4 to continuously supply the second processing liquid from theupper pipe 75 onto the upper surface 91 of the substrate 9 being rotatedin the chamber 7 in the reduced pressure atmosphere. The secondprocessing liquid supplied onto the center portion of the upper surface91 of the substrate 9 which is coated with the first processing liquidis spread toward the peripheral portion by the rotation of the substrate9, and the first processing liquid on the upper surface 91 is pushedaway from the edge of the substrate 9 to the outside thereof. Then, thefirst processing liquid on the upper surface 91 of the substrate 9 isreplaced with the second processing liquid and the entire upper surface91 is thereby coated with the second processing liquid (Step S15). Thefirst processing liquid and the second processing liquid overflown fromthe upper surface 91 of the substrate 9 are sucked by the suction part62, to be thereby discharged to the outside of the chamber 7. Further,the second processing liquid is also supplied from the lower center pipe76 onto the center portion of the lower surface 92 of the substrate 9and spread toward the peripheral portion by the rotation of thesubstrate 9.

After the coating of the upper surface 91 of the substrate 9 with thesecond processing liquid is finished, the control part 11 controls thegas supply part 61 to increase the pressure in the internal space 70 ofthe chamber 7 to a predetermined pressure higher than the normalpressure (preferably higher than the normal pressure, and not higherthan a pressure higher than the normal pressure by about 0.1 MPa). Whilethe pressure in the internal space 70 increases and also after theinternal space 70 is brought into a predetermined pressurizedatmosphere, the supply of the second processing liquid from the secondprocessing liquid supply part 4 continues. Then, the second processingliquid which is deionized water is continuously supplied onto the uppersurface 91 of the substrate 9 being rotated in the internal space 70 inthe pressurized atmosphere and a rinse process is performed for apredetermined time period (Step S16).

After the rinse process is finished, the supply of the second processingliquid from the second processing liquid supply part 4 is stopped, andthe control part 11 controls the suction part 62 to reduce the pressurein the chamber 70 of the chamber 7 to a predetermined pressure lowerthan the normal pressure (preferably lower than the normal pressure, andnot lower than about 15 kPa). Then, with the internal space 70 broughtinto a predetermined reduced pressure atmosphere, the control part 11controls the substrate rotating mechanism 5 to increase the number ofrevolution of the substrate 9, and with high-speed rotation of thesubstrate 9, the second processing liquid is removed from the substrate9 and a process of drying the substrate 9 is thereby performed (StepS17). While the drying process is performed on the substrate 9 underreduced pressure, the second processing liquid removed from thesubstrate 9 is sucked by the suction part 62 and discharged to theoutside of the chamber 7. As indicated by the two-dot chain line in FIG.3, while the drying process is performed on the substrate 9 underreduced pressure, the substrate 9 may be heated by the heating part 8concurrently. This can promote drying of the substrate 9.

After the drying of the substrate 9 is finished, the rotation of thesubstrate 9 is stopped (Step S18), and the internal space 70 of thechamber 7 is bought back to normal pressure. After that, the chambercover 73 is separated from the chamber sidewall 72, and the substrate 9is unloaded from the chamber 7.

As discussed above, in the substrate processing apparatus 1, thesubstrate 9 is heated by the heating part 8 with the internal space 70of the chamber 7 brought into the reduced pressure atmosphere in StepS12. This suppresses the movement of the heat from the substrate 9 tothe ambient gas and the substrate 9 can be heated in a shorter time ascompared with under normal pressure. Further, since the heating part 8includes the lamp 81 for heating the substrate 9 by emitting lighttoward the substrate 9, it is possible to simplify the configuration ofthe chamber 7 and the inside of the chamber 7.

In Step S13, with the internal space 70 of the chamber 7 brought intothe reduced pressure atmosphere, the first processing liquid is suppliedonto the upper surface 91 of the substrate 9 while the substrate 9 isrotated, and therefore the first processing liquid can be quickly spreadfrom the center portion to the peripheral portion on the upper surface91 of the substrate 9. The upper surface 91 of the substrate 9 can bethereby coated with the first processing liquid in a shorter time ascompared with under normal pressure. Further, since the suction part 62sucks the first processing liquid from the vicinity of the edge of thesubstrate 9, the movement speed of the first processing liquid on theupper surface 91 of the substrate 9 can be increased. As a result, thecoating of the upper surface 91 of the substrate 9 with the firstprocessing liquid can be performed in a still shorter time, and the timerequired for the processing of the substrate 9 can be shortened.

In Step S13, as discussed above, since the amount of gas existing in agap between fine patterns (hereinafter, referred to as a “pattern gap”)on the substrate 9 decreases as compared with under normal pressure bybringing the internal space 70 of the chamber 7 into the reducedpressure atmosphere, the first processing liquid supplied on the uppersurface 91 of the substrate 9 can easily enter the pattern gap. It isthereby possible to appropriately perform an etching process in thepattern gap. Further, after the upper surface 91 of the substrate 9 iscoated with the first processing liquid, by increasing the pressure inthe internal space 70 of the chamber 7, the first processing liquid issqueezed into the pattern gap. As a result, it is possible to cause thefirst processing liquid to more easily enter the pattern gap. Further,since the pressure in the internal space 70 of the chamber 7 isincreased to a pressure higher than the normal pressure and the internalspace 70 is thereby brought into the pressurized atmosphere, it ispossible to cause the first processing liquid to much more easily enterthe pattern gap.

In Step S14, with the internal space 70 of the chamber 7 brought intothe pressurized atmosphere, the first processing liquid is continuouslysupplied onto the upper surface 91 of the substrate 9 while thesubstrate 9 is rotated, and the etching process is thereby performed.This suppresses vaporization of the first processing liquid on thesubstrate 9 as compared with under normal pressure, and furthersuppresses a decrease in the temperature of the substrate 9 due to theheat of vaporization as it goes from the center portion of the substrate9 toward the peripheral portion thereof. As a result, it is possible toimprove the uniformity in the temperature of the upper surface 91 of thesubstrate 9 being subjected to the etching process using the firstprocessing liquid and improve the uniformity of etching over the entireupper surface 91 of the substrate 9. Further, the uniformity of etchingover the entire lower surface 92 of the substrate 9 can be alsoimproved.

As discussed above, the number of revolution of the substrate 9 in theetching process performed on the substrate 9 in Step S14 is smaller thanthat of the substrate 9 in the process of coating the upper surface 91of the substrate 9 with the first processing liquid in Step S13. Thisfurther suppresses vaporization of the first processing liquid from thesubstrate 9 and it is thereby possible to further improve the uniformityin the temperature of the upper surface 91 of the substrate 9 beingsubjected to the etching process. As a result, it is possible to furtherimprove the uniformity of etching over the entire upper surface 91 ofthe substrate 9.

In Step S15, with the internal space 70 of the chamber 7 brought intothe reduced pressure atmosphere, the second processing liquid issupplied onto the upper surface 91 of the substrate 9 while thesubstrate 9 is rotated, and therefore the second processing liquid canbe quickly spread from the center portion to the peripheral portion onthe upper surface 91 of the substrate 9. The replacement of firstprocessing liquid with the second processing liquid and the coating ofthe upper surface 91 of the substrate 9 with the second processingliquid can be performed in a shorter time as compared with under normalpressure. Further, since the suction part 62 sucks the first processingliquid and the second processing liquid from the vicinity of the edge ofthe substrate 9, the replacement of the first processing liquid with thesecond processing liquid and the coating of the upper surface 91 of thesubstrate 9 with the second processing liquid can be performed in astill shorter time.

In the substrate processing apparatus 1, as discussed above, after theupper surface 91 of the substrate 9 is coated with the second processingliquid, by increasing the pressure in the internal space 70 of thechamber 7, the second processing liquid is squeezed into the patterngap. As a result, the second processing liquid can easily enter thepattern gap and it is therefore possible to more reliably replace thefirst processing liquid with the second processing liquid. Further,since the pressure in the internal space 70 of the chamber 7 isincreased to a pressure higher than the normal pressure and the internalspace 70 is brought into the pressurized atmosphere, it is possible tocause the second processing liquid to much more easily enter the patterngap.

In Step S16, with the internal space 70 of the chamber 7 brought intothe pressurized atmosphere, the second processing liquid is continuouslysupplied onto the upper surface 91 of the substrate 9 while thesubstrate 9 is rotated, and the rinse process is thereby performed. Thissuppresses vaporization of the second processing liquid on the substrate9 as compared with under normal pressure, and further suppresses adecrease in the temperature of the substrate 9 due to the heat ofvaporization as it goes from the center portion of the substrate 9toward the peripheral portion thereof. As a result, it is possible toimprove the uniformity in the temperature of the upper surface 91 of thesubstrate 9 being subjected to the rinse process using the secondprocessing liquid. Further, it is also possible to improve theuniformity of rinsing over the entire lower surface 92 of the substrate9.

In Step S17, with the internal space 70 of the chamber 7 brought intothe reduced pressure atmosphere, the drying process is performed on thesubstrate 9 while the substrate 9 is rotated. It is thereby possible toperform the drying of the substrate 9 in a shorter time as compared withunder normal pressure.

Next, discussion will be made on a substrate processing apparatus inaccordance with the second preferred embodiment of the presentinvention. FIG. 4 is a view showing a configuration of a substrateprocessing apparatus 1 a in accordance with the second preferredembodiment. In the substrate processing apparatus 1 a, the firstprocessing liquid supply part 3 does not include the pump 32 and thesecond processing liquid supply part 4 does not include the pump 42. Theconfiguration of the substrate processing apparatus 1 a other than theabove is the same as that of the substrate processing apparatus 1 shownin FIG. 1, and in the following discussion, constituent elementsidentical to those of the substrate processing apparatus 1 arerepresented by the same reference signs.

FIG. 5 is a flowchart showing an operation flow of processing thesubstrate 9 in the substrate processing apparatus 1 a. FIG. 6 is atiming chart of processing the substrate 9. In FIG. 6, like in FIG. 3,lines 101 to 104 represent the pressure in the chamber 7, the amount(i.e. the flow rate) of first processing liquid supplied from the firstprocessing liquid supply part 3, the amount of second processing liquidsupplied from the second processing liquid supply part 4, and ON/OFF ofthe lamp 81 of the heating part 8, respectively.

In the substrate processing apparatus 1 a, first, the substrate 9 isloaded into the chamber 7, held by the substrate holding part 2, andstarted to rotate by the substrate rotating mechanism 5 (Step S21).Subsequently, with the internal space 70 of the chamber 7 brought intothe reduced pressure atmosphere by the suction part 62, the heating part8 heats the substrate 9 (Step S22).

Next, the control part 11 controls the upper changeover valve 751 andthe lower changeover valve 761 to connect the first pooling part 30 forpooling the first processing liquid therein and the internal space 70 ofthe chamber 7. The first pooling part 30 is open to the air, and by thepressure difference between the internal space 70 in the reducedpressure atmosphere and the first pooling part 30, the first processingliquid pooled in the first pooling part 30 is continuously supplied ontothe respective center portions of the upper surface 91 and the lowersurface 92 of the substrate 9 through the upper pipe 75 and the lowercenter pipe 76. In other words, the supply of the first processingliquid from the first processing liquid supply part 3 is performed bythe pressure difference between the internal space 70 of the chamber 7in the reduced pressure atmosphere and the outside of the chamber 7. Thefirst processing liquid supplied onto the center portion of the uppersurface 91 of the substrate 9 is spread toward the peripheral portion bythe rotation of the substrate 9 and the entire upper surface 91 iscoated with the first processing liquid (Step S23). The first processingliquid overflown from the upper surface 91 of the substrate 9 is suckedby the suction part 62 controlled by the control part 11 and dischargedto the outside of the chamber 7. Further, the first processing liquidsupplied onto the center portion of the lower surface 92 of thesubstrate 9 is also spread toward the peripheral portion by the rotationof the substrate 9.

After the coating of the upper surface 91 of the substrate 9 with thefirst processing liquid is finished, the control part 11 controls thedegree of opening of the upper changeover valve 751 and the lowerchangeover valve 761 to reduce the flow rate of the first processingliquid supplied from the first processing liquid supply part 3. Further,the control part 11 controls the substrate rotating mechanism 5 to alsoreduce the number of revolution of the substrate 9. Then, the firstprocessing liquid which is an etching solution is continuously suppliedat a flow rate lower than that in Step S23 onto the upper surface 91 ofthe substrate 9 being rotated at a number of revolution less than thatin Step S23 and an etching process is thereby performed for apredetermined time period in the reduced pressure atmosphere (Step S24).

After the etching process is finished, the upper changeover valve 751and the lower changeover valve 761 are controlled to connect the secondpooling part 40 for pooling the second processing liquid therein and theinternal space 70 of the chamber 7. The supply of the first processingliquid is thereby stopped. Further, the heating of the substrate 9 bythe heating part 8 is also stopped. The second pooling part 40 is opento the air, and by the pressure difference between the internal space 70in the reduced pressure atmosphere and the second pooling part 40, thesecond processing liquid pooled in the second pooling part 40 iscontinuously supplied onto the respective center portions of the uppersurface 91 and the lower surface 92 of the substrate 9 through the upperpipe 75 and the lower center pipe 76. In other words, the supply of thesecond processing liquid from the second processing liquid supply part 4is performed by the pressure difference between the internal space 70 ofthe chamber 7 in the reduced pressure atmosphere and the outside of thechamber 7.

The second processing liquid supplied onto the center portion of theupper surface 91 of the substrate 9 is spread toward the peripheralportion by the rotation of the substrate 9, and the first processingliquid on the upper surface 91 of the substrate 9 is replaced with thesecond processing liquid and the entire upper surface 91 is therebycoated with the second processing liquid (Step S25). The firstprocessing liquid and the second processing liquid overflown from theupper surface 91 of the substrate 9 are sucked by the suction part 62,to be thereby discharged to the outside of the chamber 7. Further, thesecond processing liquid supplied onto the center portion of the lowersurface 92 of the substrate 9 is also spread toward the peripheralportion by the rotation of the substrate 9. After that, the supply ofthe second processing liquid continues in the internal space 70 in thereduced pressure atmosphere and a rinse process is performed for apredetermined time period (Step S26).

After the rinse process is finished, the supply of the second processingliquid from the second processing liquid supply part 4 is stopped. Then,the number of revolution of the substrate 9 is increased, and withhigh-speed rotation of the substrate 9 in the reduced pressureatmosphere, the second processing liquid is removed from the substrate 9and a process of drying the substrate 9 is thereby performed (Step S27).While the drying process is performed on the substrate 9 under reducedpressure, the second processing liquid removed from the substrate 9 issucked by the suction part 62 and discharged to the outside of thechamber 7. As indicated by the two-dot chain line in FIG. 6, while thedrying process is performed on the substrate 9 under reduced pressure,the substrate 9 may be heated by the heating part 8 concurrently. Thiscan promote drying of the substrate 9.

After the drying of the substrate 9 is finished, the rotation of thesubstrate 9 is stopped (Step S28), and the internal space 70 of thechamber 7 is bought back to normal pressure by the gas supply part 61.After that, the chamber cover 73 is separated from the chamber sidewall72, and the substrate 9 is unloaded from the chamber 7.

As discussed above, in the substrate processing apparatus 1 a, like inthe first preferred embodiment, since the first processing liquid issupplied onto the upper surface 91 of the substrate 9 with the internalspace 70 of the chamber 7 brought into the reduced pressure atmospherein Step S23, the upper surface 91 of the substrate 9 can be therebycoated with the first processing liquid in a shorter time as comparedwith under normal pressure. Further, since the second processing liquidis supplied onto the upper surface 91 of the substrate 9 with theinternal space 70 of the chamber 7 brought into the reduced pressureatmosphere in Step S25, the replacement of first processing liquid withthe second processing liquid and the coating of the upper surface 91 ofthe substrate 9 with the second processing liquid can be performed in ashorter time as compared with under normal pressure.

In the substrate processing apparatus 1 a, the supply of the firstprocessing liquid from the first processing liquid supply part 3 isperformed by the pressure difference between the internal space 70 ofthe chamber 7 in the reduced pressure atmosphere and the outside of thechamber 7. With this operation, the pump may be omitted from the firstprocessing liquid supply part 3 and it is thereby possible to simplifythe configuration of the substrate processing apparatus 1 a. Further,the supply of the second processing liquid from the second processingliquid supply part 4 is also performed by the pressure differencebetween the internal space 70 of the chamber 7 in the reduced pressureatmosphere and the outside of the chamber 7. With this operation, thepump may be omitted from the second processing liquid supply part 4 andit is thereby possible to further simplify the configuration of thesubstrate processing apparatus 1 a.

The above-discussed preferred embodiments allow various variations.

In the substrate processing apparatus 1 of the first preferredembodiment, the etching process in Step S14 and the rinse process inStep S16 may be performed, for example, with the internal space 70 ofthe chamber 7 brought to normal pressure.

In the substrate processing apparatuses 1 and 1 a, after the rinseprocess (Steps S16 and S26) is finished, isopropyl alcohol (IPA) issupplied onto the upper surface 91 and the lower surface 92 of thesubstrate 9, and the drying process (Steps S17 and S27) may be performedafter replacing the second processing liquid on the substrate 9 with theIPA. In the case where the IPA replacement is performed, it ispreferable that the IPA should be supplied onto the substrate 9 with theinternal space 70 of the chamber 7 brought into the reduced pressureatmosphere. With this pressure reduction, like the replacement of thefirst processing liquid with the second processing liquid (Steps S15 andS25), the replacement of the second processing liquid with the IPA andthe coating of the upper surface 91 of the substrate 9 with the IPA canbe performed in a shorter time as compared with under normal pressure.Further, since the suction part 62 sucks the second processing liquidand the IPA from the vicinity of the edge of the substrate 9, thereplacement of the second processing liquid with the IPA and the coatingof the upper surface 91 of the substrate 9 with the IPA can be performedin a still shorter time.

The first processing liquid and the second processing liquid are notnecessarily limited to an etching solution and deionized water,respectively, but various other processing liquids may be used as thefirst processing liquid and the second processing liquid to performvarious processings on the substrate 9. The supply of the firstprocessing liquid and the second processing liquid onto the lowersurface 92 may be omitted. Further, in the substrate processingapparatus 1 and 1 a, the second processing liquid supply part 4 may beomitted and only the processing of the substrate 9, using the firstprocessing liquid, may be performed.

The heating part 8 is not limited to one which emits light toward thesubstrate 9 to heat the substrate 9. For example, a heater such as anelectrically heated wire or the like may be provided as the heating part8 inside the chamber bottom 71 and the chamber cover 73. Further,instead of the suction part 62, a gas suction part for sucking gas inthe chamber 7 and a processing liquid suction part for sucking theprocessing liquid in the chamber 7 may be provided separately.

In the substrate processing apparatus 1 and 1 a, the processing may beperformed on various kinds of substrates other than the semiconductorsubstrate. The configuration of the chamber 7 may be changed asappropriate in accordance with the shape of a substrate to be processed.

The configurations in the above-discussed preferred embodiments andvariations may be combined as appropriate only if those do not conflictwith one another.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention. This application claims priority benefit under 35 U.S.C.Section 119 of Japanese Patent Application No. 2012-073601 filed in theJapan Patent Office on Mar. 28, 2012, the entire disclosure of which isincorporated herein by reference.

REFERENCE SIGNS LIST

1, 1 a Substrate processing apparatus

2 Substrate holding part

3 First processing liquid supply part

4 Second processing liquid supply part

5 Substrate rotating mechanism

7 Chamber

8 Heating part

9 Substrate

11 Control part

61 Gas supply part

62 Suction part

70 Internal space

91 Upper surface (of Substrate)

S11 to S18, S21 to S28 Step

The invention claimed is:
 1. A substrate processing method of processinga substrate, comprising the steps of: a) holding a substrate with a mainsurface thereof directed upward in an internal space of a chamber andforming a pattern on said main surface of said substrate; b) bringingsaid internal space of said chamber into a reduced pressure atmosphereand supplying a processing liquid onto a center portion of said mainsurface of said substrate while rotating said substrate in said reducedpressure atmosphere, to thereby coat said main surface of said substratewith said processing liquid; and c) increasing pressure in said internalspace of said chamber and continuously supplying said processing liquidonto said main surface of said substrate coated with said processingliquid while rotating said substrate, to thereby perform a predeterminedprocessing after said step b), wherein the number of revolutions of saidsubstrate in said step c) is smaller than that of said substrate in saidstep b).
 2. The substrate processing method according to claim 1,wherein said predetermined processing is performed in a pressurizedatmosphere in said step c).
 3. The substrate processing method accordingto claim 1, further comprising the step of: d) stopping the supply ofsaid processing liquid and bringing said internal space of said chamberinto said reduced pressure atmosphere, and then supplying anotherprocessing liquid onto said main surface of said substrate coated withsaid processing liquid to replace said processing liquid with saidanother processing liquid while rotating said substrate, to thereby coatsaid main surface of said substrate with said another processing liquidafter said step c).
 4. The substrate processing method according toclaim 3, further comprising the step of: e) increasing pressure in saidinternal space of said chamber and continuously supplying said anotherprocessing liquid onto said main surface of said substrate coated withsaid another processing liquid while rotating said substrate, to therebyperform another processing after said step d).
 5. The substrateprocessing method according to claim 4, wherein said another processingis performed in a pressurized atmosphere in said step e).
 6. Thesubstrate processing method according to claim 1, further comprising thestep of: f) after bringing said internal space of said chamber into saidreduced pressure atmosphere and before continuously supplying saidprocessing liquid, heating said substrate in said reduced pressureatmosphere.
 7. The substrate processing method according to claim 1,further comprising the step of: g) bringing said internal space of saidchamber into said reduced pressure atmosphere and drying said substratewhile rotating said substrate in said reduced pressure atmosphere aftersaid step b).